IRFB7787PBF
MOSFET N-CH 75V 76A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFB7787PBF, a robust N-Channel MOSFET from the StrongIRFET™ series. This component features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 76A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The low on-resistance (Rds On) of 8.4mOhm at 46A and 10V Vgs makes it suitable for high-current applications. Key parameters include a gate charge (Qg) of 109 nC at 10V and input capacitance (Ciss) of 4020 pF at 25V. This device is packaged in a TO-220AB through-hole configuration and operates within a temperature range of -55°C to 175°C. The IRFB7787PBF finds application in industrial power supplies, electric vehicle charging, and battery management systems.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4020 pF @ 25 V |
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