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IRFB7740PBF

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IRFB7740PBF

MOSFET N-CH 75V 87A TO220AB

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Infineon Technologies StrongIRFET™ MOSFET, part number IRFB7740PBF, is a high-performance N-Channel power MOSFET. Featuring a Drain-Source Voltage (Vdss) of 75V and a continuous drain current (Id) of 87A at 25°C, this component is designed for demanding applications. Its low on-resistance (Rds On) of 7.3mOhm at 52A and 10V gate-source voltage (Vgs) ensures efficient power delivery. The device boasts a maximum power dissipation of 143W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 122 nC at 10V and input capacitance (Ciss) of 4650 pF at 25V. The IRFB7740PBF is packaged in a TO-220AB through-hole configuration, making it suitable for power switching and motor control circuits across various industrial sectors.

Additional Information

Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C87A (Tc)
Rds On (Max) @ Id, Vgs7.3mOhm @ 52A, 10V
FET Feature-
Power Dissipation (Max)143W (Tc)
Vgs(th) (Max) @ Id3.7V @ 100µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4650 pF @ 25 V

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