IRFB7437GPBF
MOSFET N CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRFB7437GPBF, offers 40V drain-source breakdown voltage and a continuous drain current capability of 195A at 25°C (Tc). This device features a low on-resistance of 2mOhm maximum at 100A and 10V Vgs. The gate charge (Qg) is specified at 225 nC maximum at 10V, and input capacitance (Ciss) is 7330 pF maximum at 25V. Operating with a gate-source voltage range of ±20V and a threshold voltage of 3.9V at 150µA, the IRFB7437GPBF utilizes advanced MOSFET technology. It is packaged in a standard TO-220AB through-hole configuration, suitable for high-power switching applications in industries such as automotive, industrial power control, and power supplies.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.9V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 25 V |
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