IRFB7434PBF
MOSFET N-CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFB7434PBF is a high-performance N-Channel MOSFET from the StrongIRFET™ series. This component features a 40V drain-source breakdown voltage and sustains a continuous drain current of 195A at 25°C case temperature, with a maximum power dissipation of 294W. Its low on-resistance of 1.6mOhm at 100A and 10V gate-source voltage makes it suitable for demanding power conversion applications. The device is packaged in a TO-220AB through-hole configuration and operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate charge (Qg) of 324 nC at 10V and input capacitance (Ciss) of 10820 pF at 25V. This MOSFET is utilized in industries such as industrial automation, electric vehicles, and power supplies.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 294W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 324 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10820 pF @ 25 V |
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