IRFB7434GPBF
MOSFET N CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' IRFB7434GPBF is an N-Channel MOSFET from the HEXFET®, StrongIRFET™ series. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 195 A at 25°C (Tc). The Rds On is specified at 1.6 mOhm maximum for Id of 100A and Vgs of 10V. Key parameters include a gate charge (Qg) of 324 nC maximum at 10 V and input capacitance (Ciss) of 10820 pF maximum at 25 V. The device supports drive voltages ranging from 6V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is 3.9V maximum at 250µA. This component, packaged in a TO-220-3 through-hole configuration, is suitable for applications in power management, industrial motor control, and high-current switching circuits across various industries.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 324 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10820 pF @ 25 V |
Request a Quote
Clients Also Buy
IRF7946TRPBF
MOSFET N-CH 40V 90A DIRECTFET MX
IRFS7430TRL7PP
MOSFET N-CH 40V 240A D2PAK
IRF100S201
MOSFET N-CH 100V 192A D2PAK
