IRFB7430GPBF
MOSFET N CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB7430GPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source voltage (Vdss) of 40V and a continuous drain current (Id) of 195A at 25°C (Tc). The low on-resistance (Rds On) of 1.3mOhm at 100A and 10V gate drive, coupled with a gate charge (Qg) of 460 nC at 10V, ensures efficient switching performance. With a maximum gate-source voltage (Vgs) of ±20V and threshold voltage (Vgs(th)) of 3.9V at 250µA, precise control is achievable. The device is housed in a TO-220AB package, suitable for through-hole mounting. The IRFB7430GPBF is utilized across various industries including automotive, industrial power, and power supply applications where high current handling and robust performance are critical.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14240 pF @ 25 V |
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