IRFB59N10DPBF
MOSFET N-CH 100V 59A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB59N10DPBF, offers a 100V drain-source voltage and a continuous drain current of 59A at 25°C (Tc). This device features a low on-resistance of 25mOhm maximum at 35.4A and 10V gate-source voltage. With a gate charge of 114nC maximum at 10V and input capacitance of 2450pF maximum at 25V, it is designed for efficient switching. The TO-220AB package provides a through-hole mounting solution and supports a maximum power dissipation of 200W at 25°C (Tc). This MOSFET is suitable for applications in industrial power supplies, motor control, and automotive systems. Operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage of ±30V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V |
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