IRFB4710PBF
MOSFET N-CH 100V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFB4710PBF is a 100V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current (Id) of 75A at 25°C (Tc) and a low on-resistance (Rds On) of 14mOhm at 45A and 10V. The TO-220AB package offers robust thermal performance with a maximum power dissipation of 200W (Tc). Key electrical specifications include a gate charge (Qg) of 170 nC @ 10V and input capacitance (Ciss) of 6160 pF @ 25V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6160 pF @ 25 V |
Request a Quote
Clients Also Buy
OP177GPZ
IC OPAMP GP 1 CIRCUIT 8DIP
LT1994CDD#PBF
IC OPAMP DIFF 1 CIRCUIT 8DFN
AD8005ARZ
IC OPAMP CFA 1 CIRCUIT 8SOIC
