IRFB4610PBF
MOSFET N-CH 100V 73A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB4610PBF. This device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 73A at 25°C. The IRFB4610PBF offers a low on-resistance (Rds On) of 14mOhm at 44A and 10V Vgs, with a maximum power dissipation of 190W. Key parameters include a gate charge (Qg) of 140 nC at 10V and input capacitance (Ciss) of 3550 pF at 50V. The MOSFET utilizes Metal Oxide technology and is housed in a TO-220AB through-hole package. Operating temperature ranges from -55°C to 175°C. This component is widely employed in industrial and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V |
Request a Quote
Clients Also Buy
OP177GPZ
IC OPAMP GP 1 CIRCUIT 8DIP
LT1994CDD#PBF
IC OPAMP DIFF 1 CIRCUIT 8DFN
AD8005ARZ
IC OPAMP CFA 1 CIRCUIT 8SOIC
