IRFB4610
MOSFET N-CH 100V 73A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB4610 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 73A at 25°C (Tc). With a low On-Resistance (Rds On) of 14mOhm at 44A and 10V gate drive, it minimizes conduction losses. The device offers a maximum power dissipation of 190W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ). Key parameters include a Gate Charge (Qg) of 140 nC @ 10V and an Input Capacitance (Ciss) of 3550 pF @ 50V. Packaged in a standard TO-220AB through-hole configuration, the IRFB4610 is suitable for power supply, motor control, and industrial automation sectors. The maximum Gate-Source Voltage (Vgs) is ±20V, and the Gate Threshold Voltage (Vgs(th)) is 4V @ 100µA.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V |
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