IRFB4510GPBF
MOSFET N CH 100V 62A TO-220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB4510GPBF is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 100V. This through-hole component, packaged in a TO-220AB, offers a continuous drain current (Id) of 62A at 25°C and a maximum power dissipation of 140W (Tc). Key parameters include a low on-resistance (Rds On) of 13.5mOhm at 37A and 10V, and a gate charge (Qg) of 87 nC at 10V. Input capacitance (Ciss) is specified at 3180 pF at 50V. The device operates within a temperature range of -55°C to 175°C (TJ). This component is frequently utilized in power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 37A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3180 pF @ 50 V |
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