IRFB4321GPBF
MOSFET N-CH 150V 83A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB4321GPBF. This device features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 83 A at 25°C (Tc). The Rds On is specified at a maximum of 15 mOhm at 33 A and 10 V. With a high Power Dissipation of 330 W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 110 nC at 10 V and an Input Capacitance (Ciss) of 4460 pF at 25 V. The device is housed in a TO-220AB package and supports through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power supply, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 25 V |
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