IRFB4310ZGPBF
MOSFET N-CH 100V 120A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB4310ZGPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 120 A at 25°C (Tc). With a low on-resistance (Rds On) of 6 mOhm at 75 A and 10 V, it minimizes conduction losses. The device offers a maximum power dissipation of 250 W (Tc) and a gate charge (Qg) of 170 nC at 10 V. Its TO-220AB package facilitates through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 50 V |
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