IRFB42N20DPBF
MOSFET N-CH 200V 44A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB42N20DPBF is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 200 V. This through-hole component, housed in a TO-220AB package, features a continuous drain current (Id) of 44A at 25°C (Tc). The Rds On (Max) is specified at 55mOhm at 26A, 10V. Key parameters include a Gate Charge (Qg) of 140 nC @ 10 V and an Input Capacitance (Ciss) of 3430 pF @ 25 V. The device supports a maximum power dissipation of 330W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial and automotive sectors requiring robust power switching capabilities.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 330W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 25 V |
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