IRFB42N20D
MOSFET N-CH 200V 44A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFB42N20D is a 200V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current rating of 44A (Tc) at 25°C and a low on-resistance of 55mOhm maximum at 26A, 10V. The device supports a gate drive voltage up to 10V for optimal Rds(on) performance. With a maximum junction temperature of 175°C and a robust TO-220AB package, the IRFB42N20D offers significant power dissipation capabilities of 330W (Tc). Key electrical parameters include a gate charge of 140 nC (Max) at 10V and input capacitance of 3430 pF (Max) at 25V. This MOSFET is commonly utilized in industrial power supplies, motor control, and automotive applications where reliable power switching is critical.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 330W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
