IRFB4233PBF
MOSFET N-CH 230V 56A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies HEXFET® series IRFB4233PBF is an N-Channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 230V and a continuous drain current (Id) of 56A at 25°C (Tc), with a maximum power dissipation of 370W (Tc). The Rds(on) is specified at a maximum of 37mOhm at 28A and 10V gate drive. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 5510 pF at 25V. The device utilizes MOSFET technology and is housed in a TO-220AB through-hole package. Operating temperature ranges from -40°C to 175°C (TJ). This component is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 230 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5510 pF @ 25 V |