IRFB4228PBF
MOSFET N-CH 150V 83A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB4228PBF is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 83A at 25°C. The low on-resistance (Rds On) of 15mOhm at 33A and 10V gate drive ensures efficient power transfer with minimal losses. With a maximum power dissipation of 330W (Tc), it is suitable for high-power switching and power management tasks. The device utilizes MOSFET technology and is packaged in a TO-220AB through-hole configuration. Key parameters include a gate charge (Qg) of 107 nC at 10V and input capacitance (Ciss) of 4530 pF at 25V. Operating temperature range is -40°C to 175°C (TJ). This MOSFET finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4530 pF @ 25 V |
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