IRFB4215PBF
MOSFET N-CH 60V 115A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB4215PBF, is a high-performance component designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current of 115A at 25°C (Tc), with a maximum power dissipation of 270W (Tc). The IRFB4215PBF boasts a low on-resistance of 9mOhm at 54A and 10V, facilitated by its advanced MOSFET technology. Key electrical characteristics include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 4080 pF at 25V. Mounting is via through-hole technology in a TO-220AB package. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage of ±20V. This component is commonly utilized in power supply, automotive, and industrial motor control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4080 pF @ 25 V |
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