IRFB4215
MOSFET N-CH 60V 115A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, IRFB4215. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 115A at 25°C (Tc). The device exhibits a low on-resistance of 9mOhm maximum at 54A and 10V Vgs. With a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 4080 pF at 25V, it is suitable for high-efficiency power switching applications. The TO-220AB package with through-hole mounting is designed for thermal management, offering a maximum power dissipation of 270W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is utilized in various industrial applications, including power supplies and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 115A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 54A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4080 pF @ 25 V |