IRFB4212PBF
MOSFET N-CH 100V 18A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFB4212PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-to-source voltage of 100V and a continuous drain current capability of 18A at 25°C (Tc). With a maximum power dissipation of 60W (Tc), it is suitable for demanding thermal environments. The Rds(On) is specified at a maximum of 72.5mOhm when conducting 13A with a 10V gate-source voltage. Key parameters include a gate charge of 23 nC (max) at 10V Vgs and an input capacitance of 550 pF (max) at 50V Vds. The device operates within a temperature range of -55°C to 175°C (TJ). It is presented in a TO-220AB through-hole package, commonly utilized in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 72.5mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
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