IRFB41N15DPBF
MOSFET N-CH 150V 41A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB41N15DPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This TO-220AB packaged device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 41A at 25°C. The Rds(on) is specified at a maximum of 45mOhm at 25A and 10V Vgs, with a typical gate charge of 110 nC at 10V. The maximum power dissipation is 200W (Tc). This component is suitable for use in industrial power supplies, automotive applications, and motor control systems. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 25 V |
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