IRFB41N15D
MOSFET N-CH 150V 41A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB41N15D is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 41A at 25°C, with a maximum power dissipation of 200W at the same temperature. The device exhibits a low on-resistance (Rds On) of 45mOhm at 25A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 2520 pF at 25V. The IRFB41N15D is housed in a TO-220AB package, suitable for through-hole mounting. It operates across an extended temperature range of -55°C to 175°C. This MOSFET finds application in power switching, motor control, and power distribution systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 25 V |
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