IRFB4115GPBF
MOSFET N-CH 150V 104A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB4115GPBF. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 104A at 25°C. The IRFB4115GPBF offers a low on-resistance of 11mOhm maximum at 62A and 10V gate drive. With a maximum power dissipation of 380W (Tc), it is suitable for high-power switching applications. The component utilizes a TO-220AB through-hole package and operates across a temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 5270 pF at 50V. This MOSFET is commonly found in industrial, automotive, and power supply applications demanding robust performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V |
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