IRFB4110GPBF
MOSFET N-CH 100V 120A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB4110GPBF. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc). The low on-resistance is rated at 4.5mOhm maximum at 75A and 10V (Vgs). With a maximum power dissipation of 370W (Tc), this through-hole TO-220AB packaged component is suitable for demanding applications. Key parameters include a gate charge (Qg) of 210 nC maximum at 10V and input capacitance (Ciss) of 9620 pF maximum at 50V. Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly utilized in industrial power supplies, automotive applications, and high-power switching circuits.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9620 pF @ 50 V |
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