IRFB3607PBF
MOSFET N-CH 75V 80A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB3607PBF is an N-Channel power MOSFET designed for high-performance switching applications. This through-hole component features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 9mOhm at 46A and 10V, it minimizes conduction losses. The device boasts a maximum power dissipation of 140W (Tc) and an operating temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 84 nC at 10V and input capacitance (Ciss) of 3070 pF at 50V. This MOSFET is suitable for use in various industrial applications, including power supplies and motor control systems. The component is supplied in a TO-220AB package.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |
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