IRFB3507PBF
MOSFET N-CH 75V 97A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB3507PBF is an N-Channel Power MOSFET with a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 97A at 25°C (Tc). This through-hole component, packaged in a TO-220AB, offers a low on-resistance (Rds On) of 8.8mOhm maximum at 58A and 10V Vgs. With a maximum power dissipation of 190W (Tc), it features a gate charge (Qg) of 130nC at 10V and an input capacitance (Ciss) of 3540pF at 50V. The operating temperature range is -55°C to 175°C (TJ). This device is suitable for applications in automotive and industrial power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 50 V |
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