IRFB3407ZPBF
MOSFET N-CH 75V 120A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB3407ZPBF is a 75V N-Channel Power MOSFET designed for high-performance applications. This through-hole component, housed in a TO-220AB package, offers a continuous drain current of 120A (Tc) and a maximum power dissipation of 230W (Tc). Key electrical characteristics include a low on-resistance of 6.4mOhm at 75A and 10V, an input capacitance (Ciss) of 4750pF at 50V, and a gate charge (Qg) of 110nC at 10V. With a maximum operating junction temperature of 175°C, it is suitable for demanding environments across various industries including industrial automation, power supplies, and electric vehicle power trains.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 50 V |
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