IRFB33N15DPBF
MOSFET N-CH 150V 33A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB33N15DPBF, offers a 150V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 33A at 25°C (Tc). This TO-220AB packaged device features a maximum On-Resistance (Rds On) of 56mOhm at 20A and 10V gate drive. Key parameters include a Ciss of 2020pF (max) at 25V and a Qg of 90nC (max) at 10V. With a maximum power dissipation of 170W (Tc), it operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V |
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