IRFB3307ZGPBF
MOSFET N-CH 75V 120A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB3307ZGPBF is an N-Channel Power MOSFET featuring a 75V breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). This device offers a low on-resistance of 5.8mOhm maximum at 75A and 10V Vgs, contributing to high efficiency in power conversion applications. With a maximum power dissipation of 230W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge of 110 nC at 10V and an input capacitance of 4750 pF at 50V. The TO-220AB package facilitates through-hole mounting. This component is widely utilized in industrial power supplies, automotive systems, and electric vehicle powertrains.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 50 V |
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