IRFB3307
MOSFET N-CH 75V 130A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB3307 is an N-Channel Power MOSFET with a 75V drain-to-source voltage (Vdss). This device offers a continuous drain current (Id) of 130A at 25°C (Tc) and a maximum power dissipation of 250W (Tc). The low on-resistance (Rds On) of 6.3mOhm at 75A and 10V gate drive voltage, coupled with a gate charge (Qg) of 180 nC at 10V, makes it suitable for high-current switching applications. Key parameters include input capacitance (Ciss) of 5150 pF at 50V and a gate-source voltage (Vgs) tolerance of ±20V. The MOSFET is housed in a TO-220AB package with a through-hole mounting type and operates across a temperature range of -55°C to 175°C (TJ). This component finds application in industrial power supplies, electric vehicle powertrains, and high-power motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V |
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