IRFB3256PBF
MOSFET N-CH 60V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB3256PBF, is designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 75A at 25°C, with a maximum power dissipation of 300W (Tc). The low On-Resistance (Rds On) of 3.4mOhm at 75A and 10V gate drive makes it suitable for demanding power switching tasks. Key parameters include a Gate Charge (Qg) of 195 nC and Input Capacitance (Ciss) of 6600 pF at 48V. The IRFB3256PBF utilizes advanced MOSFET technology and is housed in a standard TO-220AB package for through-hole mounting. This component is commonly employed in industrial automation, power supply design, and electric vehicle systems. It operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum Gate-to-Source Voltage (Vgs) of ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 48 V |
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