IRFB31N20DPBF
MOSFET N-CH 200V 31A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFB31N20DPBF is a 200V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current capability of 31A at 25°C (Tc) and a low on-resistance of 82mOhm maximum at 18A, 10V. The device offers a gate charge of 107 nC at 10V and an input capacitance (Ciss) of 2370 pF at 25V. With a maximum power dissipation of 200W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding environments. The TO-220AB package with through-hole mounting facilitates integration into various power supply designs, motor control circuits, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 25 V |