IRFB3006GPBF
MOSFET N-CH 60V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB3006GPBF, offers a 60 V drain-source breakdown voltage and a continuous drain current capability of 195 A at 25°C (Tc). This through-hole TO-220AB packaged device features a low on-resistance of 2.5 mOhm at 170 A and 10 V Vgs, with a maximum power dissipation of 375 W (Tc). The gate charge (Qg) is specified at 300 nC with a 10 V gate-source voltage, and input capacitance (Ciss) is 8970 pF at 50 V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 170A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8970 pF @ 50 V |
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