IRFB3004PBF
MOSFET N-CH 40V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFB3004PBF is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 195A at 25°C, with a maximum power dissipation of 380W (Tc). The Rds On is specified at a low 1.75mOhm @ 195A, 10V, utilizing a 10V gate drive. Key parameters include a Gate Charge (Qg) of 240 nC @ 10V and Input Capacitance (Ciss) of 9200 pF @ 25V. The TO-220AB package with through-hole mounting facilitates integration into power systems. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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