IRFB17N20D
MOSFET N-CH 200V 16A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFB17N20D. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 16A at 25°C (Tc). The IRFB17N20D offers a low on-resistance of 170mOhm maximum at 9.8A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 50 nC maximum at 10V and an input capacitance (Ciss) of 1100 pF maximum at 25V. With a maximum power dissipation of 140W (Tc) and 3.8W (Ta), this TO-220AB packaged component is suitable for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial automation, power supply applications, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 9.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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