IRF9Z34NSTRRPBF
MOSFET P-CH 55V 19A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9Z34NSTRRPBF is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current capability of 19A (Tc) at 25°C. The Rds(On) is specified at a maximum of 100mOhm at 10A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 35 nC maximum at 10V and an Input Capacitance (Ciss) of 620 pF maximum at 25V. The MOSFET is housed in a TO-263-3, D2PAK surface mount package for robust thermal management, with a maximum power dissipation of 68W (Tc). This component is suitable for use in industrial, automotive, and power supply applications where high current handling and low on-resistance are critical. The operating temperature range is -55°C to 175°C. This part is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |