IRF9Z34NSTRR
MOSFET P-CH 55V 19A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF9Z34NSTRR is a P-channel Power MOSFET designed for demanding applications. This surface mount device, packaged in a D2PAK (TO-263-3), features a continuous drain current capability of 19A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 55V. The switch-on characteristic is defined by a maximum on-resistance (Rds On) of 100mOhm at 10A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 35nC (Max) at 10V and an input capacitance (Ciss) of 620pF (Max) at 25V. With a maximum power dissipation of 68W (Tc), this MOSFET is suitable for use in power supply, motor control, and industrial automation systems. It operates over a junction temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |