IRF9Z34NL
MOSFET P-CH 55V 19A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9Z34NL. This P-channel power MOSFET features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain current (Id) of 19A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 100mOhm at 10A and 10V, and a gate charge (Qg) of 35 nC at 10V, this component is suitable for demanding applications. It offers a significant power dissipation capability of 68W (Tc). The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, designed for through-hole mounting. This MOSFET is commonly utilized in power management, consumer electronics, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |