IRF9Z24NSTRLPBF
MOSFET P-CH 55V 12A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9Z24NSTRLPBF is a P-Channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 12A at 25°C (Tc). With a maximum on-resistance (Rds On) of 175mOhm at 7.2A and 10V Vgs, it offers efficient power handling. The MOSFET exhibits a typical gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 350 pF at 25V. Designed for surface mounting, it comes in a D2PAK (TO-263-3) package, suitable for high-power density solutions. Its robust construction allows for operation across a wide temperature range of -55°C to 175°C (TJ). This component is utilized in various industrial sectors, including automotive and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |