IRF9Z24NS
MOSFET P-CH 55V 12A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF9Z24NS, is a surface-mount component designed for demanding applications. This D2PAK package device features a 55V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). With a maximum on-resistance of 175 milliohms at 7.2A and 10V gate-source voltage, it offers efficient power switching. The IRF9Z24NS exhibits a gate charge of 19 nC and an input capacitance of 350 pF, facilitating fast switching speeds. It is engineered for operation across a wide temperature range of -55°C to 175°C (TJ). This component is commonly utilized in power supply designs, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |