IRF9Z24NLPBF
MOSFET P-CH 55V 12A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9Z24NLPBF is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 12 A at 25°C (Tc). The Rds On is specified at a maximum of 175mOhm at 7.2A and 10V gate drive. Key parameters include a gate charge (Qg) of 19 nC and input capacitance (Ciss) of 350 pF, both measured at specific Vgs and Vds conditions. The device offers a power dissipation capability of 45W at 25°C (Tc) and 3.8W at 25°C (Ta). Packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA configuration, it supports through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial automation, power supplies, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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