IRF9540NSTRRPBF
MOSFET P-CH 100V 23A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9540NSTRRPBF is a P-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 23A at 25°C (Tc). The device offers low on-resistance (Rds On) of 117mOhm maximum at 14A, 10V, facilitating reduced conduction losses. With a Gate Charge (Qg) of 110 nC maximum at 10V and an input capacitance (Ciss) of 1450 pF maximum at 25V, it enables fast switching speeds. The IRF9540NSTRRPBF is housed in a TO-263-3, D2PAK surface mount package, providing robust thermal performance with a maximum power dissipation of 110W at 25°C (Tc). Its operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and consumer electronics where reliable power management is critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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