IRF9540NSTRR
MOSFET P-CH 100V 23A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9540NSTRR is a P-Channel power MOSFET in a D2PAK surface mount package. This device offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 23A at 25°C (Tc). Key performance parameters include a maximum Rds(on) of 117mOhm at 11A and 10V Vgs, with a gate charge (Qg) of 97nC at 10V. The component features a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 4V. Power dissipation is rated at 3.8W (Ta) and 140W (Tc). This MOSFET is suitable for applications in industrial and consumer electronics requiring efficient switching and power control. The component is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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