IRF9540NSPBF
MOSFET P-CH 100V 23A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF9540NSPBF is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 23A at 25°C (Tc). With a low on-resistance (Rds On) of 117mOhm maximum at 14A and 10V gate-source drive, it minimizes conduction losses. The device offers a gate charge (Qg) of 110nC maximum at 10V and an input capacitance (Ciss) of 1450pF maximum at 25V. The IRF9540NSPBF is housed in a surface-mount D2PAK (TO-263-3) package, supporting efficient thermal management with a maximum power dissipation of 110W (Tc). Operating across a wide temperature range of -55°C to 150°C, it is suitable for automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
