IRF9540NLPBF
MOSFET P-CH 100V 23A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-channel MOSFET, part number IRF9540NLPBF, offers a 100V drain-source voltage with a continuous drain current of 23A at 25°C (Tc). This through-hole component features a maximum Rds(on) of 117mOhm at 14A and 10V Vgs. Key parameters include a gate charge of 110 nC @ 10V and input capacitance of 1450 pF @ 25V. The TO-262-3 Long Leads package facilitates robust mounting. With a maximum power dissipation of 110W (Tc), this MOSFET operates across a temperature range of -55°C to 150°C. It finds application in power management and switching circuits across various industrial sectors including automotive and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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