IRF9540NL
MOSFET P-CH 100V 23A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9540NL is a P-channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and offers a Continuous Drain Current (Id) of 23 A at 25°C (Tc). The Rds(On) is specified at a maximum of 117 mOhm at 11 A and 10 V gate drive. Key electrical parameters include a Gate Charge (Qg) of 97 nC at 10 V and an Input Capacitance (Ciss) of 1300 pF at 25 V. The device supports a maximum Gate-to-Source Voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA. With a maximum power dissipation of 140 W (Tc) and 3.8 W (Ta), it is housed in a TO-262-3 Long Leads package for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). Applications include power supply units, motor control, and general-purpose switching in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 97 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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