IRF9530NSTRRPBF
MOSFET P-CH 100V 14A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF9530NSTRRPBF, offers a 100V drain-source breakdown voltage and a continuous drain current of 14A at 25°C (Tc). This surface mount device, packaged in a TO-263-3 (D2PAK), features a typical Rds(on) of 200mOhm at 8.4A and 10V gate-source voltage. With a maximum gate charge of 58nC and input capacitance of 760pF, it is suitable for applications requiring efficient power switching. The component operates across a temperature range of -55°C to 175°C. Its power dissipation capabilities are rated at 3.8W (Ta) and 79W (Tc). This MOSFET is commonly utilized in industrial, automotive, and power management sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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