IRF9530NSTRR
MOSFET P-CH 100V 14A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, part number IRF9530NSTRR, offers a 100V drain-source voltage and a continuous drain current of 14A at 25°C (Tc). This device features a maximum Rds(on) of 200mOhm at 8.4A and 10V Vgs, with a gate charge (Qg) of 58 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 760 pF at 25V. Designed for surface mounting in a D2PAK (TO-263-3, D2PAK) package, this MOSFET operates across a temperature range of -55°C to 175°C. Power dissipation is 3.8W (Ta) and 79W (Tc). This component is suitable for applications in industrial and automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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