IRF9530NSPBF
MOSFET P-CH 100V 14A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9530NSPBF is a P-channel Power MOSFET designed for demanding applications. This surface mount device features a Vds of 100V and a continuous drain current (Id) of 14A at 25°C (Tc). With a maximum Rds(on) of 200mOhm at 8.4A and 10V Vgs, it offers efficient power handling. The device boasts a low gate charge (Qg) of 58 nC at 10V and an input capacitance (Ciss) of 760 pF at 25V. Power dissipation is rated at 3.8W (Ta) and 79W (Tc). The TO-263-3, D2PAK package provides robust thermal performance. This component is suitable for use in industrial, automotive, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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