IRF9530NS
MOSFET P-CH 100V 14A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF9530NS is a P-channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C (Tc). With a low on-resistance of 200mOhm maximum at 8.4A and 10V gate drive, it ensures efficient power transfer. The IRF9530NS offers a gate charge of 58nC maximum and an input capacitance of 760pF maximum. Its D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) surface mount package supports a maximum power dissipation of 79W at 25°C (Tc). This component is suitable for use in industrial and automotive power management systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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